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A novel post-oxidation annealing (POA) process with supercritical N2O (SCN2O) fluid is reported to be highly effective in improving the interface properties of the SiO2/4H-silicon carbide (SiC) (0001) systems. After SCN2O POA, the interface state density reduces to 2.8 times 10{{11}} eV-1cm-2, which is about 3.5 times lower than that after a traditional high-temperature N2O POA process. Meanwhile, the highest oxide critical electric field shows an increase of 18.19% and the near-interfacial oxide traps is reduced by 69.90% compared with that after N2O POA process. The process temperature is as low as 120 °C. The significantly reduced processing temperature avoids additional defect generation while the supercritical state provides a stronger nitridation effect. SCN2O annealing is a promising candidate for POA process toward high-performance SiC power metal-oxide-semiconductor field effect transistors (MOSFETs). © 1963-2012 IEEE.
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IEEE Transactions on Electron Devices
ISSN: 0018-9383
Year: 2021
Issue: 4
Volume: 68
Page: 1841-1846
2 . 9 1 7
JCR@2020
ESI Discipline: ENGINEERING;
ESI HC Threshold:30
CAS Journal Grade:3
Cited Count:
WoS CC Cited Count: 0
SCOPUS Cited Count: 11
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 12
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