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Author:

Wang, Menghua (Wang, Menghua.) | Yang, Mingchao (Yang, Mingchao.) | Liu, Weihua (Liu, Weihua.) | Qi, Jinwei (Qi, Jinwei.) | Yang, Songquan (Yang, Songquan.) | Han, Chuanyu (Han, Chuanyu.) | Geng, Li (Geng, Li.) | Hao, Yue (Hao, Yue.)

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Abstract:

A novel post-oxidation annealing (POA) process with supercritical N2O (SCN2O) fluid is reported to be highly effective in improving the interface properties of the SiO2/4H-silicon carbide (SiC) (0001) systems. After SCN2O POA, the interface state density reduces to 2.8 times 10{{11}} eV-1cm-2, which is about 3.5 times lower than that after a traditional high-temperature N2O POA process. Meanwhile, the highest oxide critical electric field shows an increase of 18.19% and the near-interfacial oxide traps is reduced by 69.90% compared with that after N2O POA process. The process temperature is as low as 120 °C. The significantly reduced processing temperature avoids additional defect generation while the supercritical state provides a stronger nitridation effect. SCN2O annealing is a promising candidate for POA process toward high-performance SiC power metal-oxide-semiconductor field effect transistors (MOSFETs). © 1963-2012 IEEE.

Keyword:

Aluminum nitride Annealing Carbides Electric fields Interface states Metals MOS devices Oxide semiconductors Power MOSFET Processing Semiconducting silicon compounds Silicon Silicon carbide Wide band gap semiconductors

Author Community:

  • [ 1 ] [Wang, Menghua]School of Microelectronics, Xi'An Jiaotong University, Xi'an, China
  • [ 2 ] [Yang, Mingchao]School of Microelectronics, Xi'An Jiaotong University, Xi'an, China
  • [ 3 ] [Liu, Weihua]School of Microelectronics, Xi'An Jiaotong University, Xi'an, China
  • [ 4 ] [Qi, Jinwei]School of Microelectronics, Xi'An Jiaotong University, Xi'an, China
  • [ 5 ] [Yang, Songquan]School of Microelectronics, Xi'An Jiaotong University, Xi'an, China
  • [ 6 ] [Han, Chuanyu]School of Microelectronics, Xi'An Jiaotong University, Xi'an, China
  • [ 7 ] [Geng, Li]School of Microelectronics, Xi'An Jiaotong University, Xi'an, China
  • [ 8 ] [Hao, Yue]School of Microelectronics, Xidian University, Xi'an, China

Reprint Author's Address:

  • [Liu, Weihua]School of Microelectronics, Xi'An Jiaotong University, Xi'an, China;;

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Source :

IEEE Transactions on Electron Devices

ISSN: 0018-9383

Year: 2021

Issue: 4

Volume: 68

Page: 1841-1846

2 . 9 1 7

JCR@2020

ESI Discipline: ENGINEERING;

ESI HC Threshold:30

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 11

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 12

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