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Author:

Rudenko, M., V (Rudenko, M., V.) | Gaponenko, N., V (Gaponenko, N., V.) | Chubenko, E. B. (Chubenko, E. B..) | Lashkovskaya, E., I (Lashkovskaya, E., I.) | Shustsikava, K., V (Shustsikava, K., V.) | Radyush, Yu, V (Radyush, Yu, V.) | Zhivulko, V. D. (Zhivulko, V. D..) | Mudryi, A., V (Mudryi, A., V.) | Wang, M. (Wang, M..) | Monaico, E., V (Monaico, E., V.) | Stepikhova, M., V (Stepikhova, M., V.) | Yablonskiy, A. N. (Yablonskiy, A. N..)

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Abstract:

Erbium-doped barium titanate (BaTiO3:Er) xerogel film with a thickness of about 500 nm was formed on the porous strontium titanate (SrTiO3) xerogel film on Si substrate after annealing at 800 degrees C or 900 degrees C. The elaborated structures show room temperature upconversion luminescence under 980 nm excitation with the photoluminescence (PL) bands at 523, 546, 658, 800 and 830 nm corresponding to H-2(11/2) -> I-4(15/2), S-4(3/2) -> (4)I1(5/2), F-4(9/2) -> I-4(15/2) and I-4(9/2) -> I-4(15/2) transitions of trivalent erbium. Raman and X-ray diffraction (XRD) analysis of BaTiO3:Er\porous SrTiO3\Si structure showed the presence of perovskite phases. Its excellent up-conversion optical performance will greatly broaden its applications in perovskite solar cells and high-end anti-counterfeiting technologies.

Keyword:

barium titanate erbium porous films sol-gel Upconversion

Author Community:

  • [ 1 ] [Rudenko, M., V]Belarusian State Univ Informat & Radioelect, P Browki 6, Minsk 220013, BELARUS
  • [ 2 ] [Gaponenko, N., V]Belarusian State Univ Informat & Radioelect, P Browki 6, Minsk 220013, BELARUS
  • [ 3 ] [Chubenko, E. B.]Belarusian State Univ Informat & Radioelect, P Browki 6, Minsk 220013, BELARUS
  • [ 4 ] [Lashkovskaya, E., I]Belarusian State Univ Informat & Radioelect, P Browki 6, Minsk 220013, BELARUS
  • [ 5 ] [Shustsikava, K., V]Belarusian State Univ Informat & Radioelect, P Browki 6, Minsk 220013, BELARUS
  • [ 6 ] [Radyush, Yu, V]Natl Acad Sci Belarus, Sci Pract Mat Res Ctr, Minsk 220072, BELARUS
  • [ 7 ] [Zhivulko, V. D.]Natl Acad Sci Belarus, Sci Pract Mat Res Ctr, Minsk 220072, BELARUS
  • [ 8 ] [Mudryi, A., V]Natl Acad Sci Belarus, Sci Pract Mat Res Ctr, Minsk 220072, BELARUS
  • [ 9 ] [Wang, M.]Xi An Jiao Tong Univ, Int Ctr Dielect Res ICDR, Shaanxi Engn Res Ctr Adv Energy Mat & Devices, Sch Elect & Informat Engn,Elect Mat Res Lab EMRL, Xian 710049, Peoples R China
  • [ 10 ] [Monaico, E., V]Tech Univ Moldova, Natl Ctr Mat Study & Testing, Stefan Cel Mare Bd 168, MD-2004 Kishinev, Moldova
  • [ 11 ] [Stepikhova, M., V]Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 607680, Russia
  • [ 12 ] [Yablonskiy, A. N.]Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 607680, Russia

Reprint Author's Address:

  • N.V. Gaponenko;;Belarusian State University of Informatics and Radioelectronics, Minsk, P. Browki 6, 220013, Belarus;;email: nik@nano.bsuir.edu.by;;

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Source :

JOURNAL OF ADVANCED DIELECTRICS

ISSN: 2010-135X

Year: 2022

Issue: 02

Volume: 12

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:7

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 4

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 6

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