The　influence　of　temperature　on　the　energy　storage　behavior　of　relaxor-ferroelectric　epitaxial　Pb0.92La0.08Zr0.52Ti0.48O3　(PLZT)　thin　film　capacitors　fabricated　using　pulsed　laser　deposition　was　evaluated　using　cyclic　current-voltage　measurements　from　25　degrees　C　to　225　degrees　C　in　order　to　elucidate　ferroelectric　and　dielectric　contributions　across　the　Curie　temperature　(T-c).　In　the　film　thickness　range　of　125　nm　to　500　nm,　it　has　been　found　that　the　leakage　current　through　the　capacitors　increases　monotonically　with　increasing　temperature　and　the　effect　is　more　prominent　at　smaller　film　thickness,　primarily　due　to　a　more　efficient　movement　of　ferroelectric　domains.　While　these　effects　prevent　thinner　PLZT　films　from　maintaining　adequate　energy　storage　efficiencies　at　temperatures　above　similar　to　100　degrees　C,　thicker　films　show　promising　energy　storage　properties　in　a　wide　temperature　range.　Specifically,　the　500　nm　thick　PLZT　film　capacitors　have　a　nearly　constant　energy　storage　efficiency　above　similar　to　70%　in　the　temperature　range　of　25　degrees　C　to　175　degrees　C,　with　a　peak　efficiency　of　78%　at　175　degrees　C　due　to　the　large　dielectric　constant　exceeding　similar　to　2000　as　the　temperature　approaches　the　PLZT　T-c　of　200　degrees　C.　By　quantifying　the　three　contributions　of　the　electric　conductivity,　dielectric　capacitance,　and　relaxor-ferroelectric　domain　switching　polarization　to　temperature　dependent　energy　storage　properties　of　relaxor-ferroelectric　capacitors,　this　study　reveals　that　the　dielectric　contribution　dominates　in　the　PLZT　capacitors　with　smaller　thickness,　while　even　contributions　from　all　three　components　are　present　in　films　of　larger　thickness.　These　results　suggest　that　the　PLZT　relaxor-ferroelectric　thin　film　capacitors　are　promising　for　energy　storage　applications　and　further　improvement　of　performance　may　be　achieved　by　optimization　of　the　film/electrode　interface.　(C)　2016　Elsevier　B.V.　All　rights　reserved.