In　order　to　study　influence　of　buffer　layer　on　intense　pulsed　field　emission　(IPFE)　of　carbon　nanotube　films　(CNTs),　CNTs　were　synthesized　on　Si　substrate　with　and　without　electroless　plated　Ni　buffer　respectively　(Ni-CNTs　and　Si-CNTs)　by　pyrolysis　of　iron　phthalocyanine　(FePc).　IPFE　properties　of　Si-CNTs　and　Ni-CNTs　were　measured　with　a　diode　structure　in　single-pulse　mode.　It　was　found　that　the　emission　ability　of　CNTs　were　improved　obviously　by　introducing　Ni　buffer　layer.　The　even　turn-on　field　decreased　from　5.0V/μm　for　Si-CNTs　to　4.3V/μm　for　Ni-CNTs,　and　the　peak　emission　current　and　current　density　increased　from　70　A　and　3.5A/cm　2　for　Si-CNTs　to　162　A　and　8.1　A/cm　2　for　Ni-CNTs　at　a　peak　field　intensity　~10.4V/μm.　The　peak　current　of　the　Ni-CNTs　increased　by　~131.4%　over　the　Si-CNTs　at　the　same　peak　electric　field.