Based　on　the　modified　random-element　isodisplacement　model　and　dielectric　continuum　model,　the　dispersions　of　interface　optical　phonons,　electron-interface　phonon　interaction　and　ternary　mixed　crystal　effect　on　interface　optical　phonons　in　In(x)Ga1-xN/GaN　quantum　wells　are　studied　in　a　fully　numerical　manner.　The　results　indicate　that　there　are　two　indium　concentration　intervals　that　interface　optical　phonons　exist.　The　indium　concentration　has　important　effects　on　the　dispersions　and　electronphonon　interactions　of　interface　optical　phonons.　The　electronIO　phonon　interactions　in　higher　indium　concentration　are　more　important　than　that　in　lower　indium　concentration.　(C)　2012　Elsevier　B.V　All　rights　reserved.