Within　the　framework　of　the　modified　random-element　isodisplacement　model　and　dielectric　continuum　model,　the　interface　optical　phonon　and　electron-interface.optical　coupling　in　GaN/AlxGa1-xN　quantum　wells　with　different　aluminum　concentration　are　studied　in　a　fully　numerical　manner.　The　results　show　that　aluminum　concentration　has　important　influence　in　the　interface　optical　phonon　and　electron-phonon　coupling　in　GaN/AlxGa1-xN　quantum　wells.　When　the　aluminum　concentration　is　lower　(0.03　＜　x　＜　0.13),　there　are　two　branches　interface　optical　phonon　in　high　frequency　range.　When　the　aluminum　concentration　is　higher　(0.13　＜　x　＜　1.00),　there　are　four　branches　interface　optical　phonons　in　high　and　low　frequency　range.　Comparing　the　electron-phonon　coupling　in　lower　and　higher　aluminum　concentration　range,　we　found　that　the　electron-phonon　coupling　in　higher　aluminum　concentration　range　is　stronger.　(C)　2013　Elsevier　B.V.　All　rights　reserved.