The　interface　optical　phonons　and　its　ternary　effects　in　onion-like　quantum　dots　are　studied　by　using　dielectric　continuum　model　and　the　modified　random-element　isodisplacement　model.　The　dispersion　relations,　the　electron-phonon　interactions　and　ternary　effects　on　the　interface　optical　phonons　are　calculated　in　the　GaN/AlxGa1-xN　onion-like　quantum　dots.　The　results　show　that　aluminium　concentration　has　important　influence　on　the　interface　optical　phonons　and　electron-phonon　interactions　in　GaN/AlxGa1-xN　onion-like　quantum　dots.　The　frequencies　of　interface　optical　phonons　and　electron-phonon　coupling　strengths　change　linearly　with　increase　of　aluminium　concentration　in　high　frequency　range,　and　do　not　change　linearly　with　increasing　aluminium　concentration　in　low　frequency　range.　(C)　2014　Elsevier　B.V.　All　rights　reserved.