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Author:

Yang, Chengzi (Yang, Chengzi.) | Pei, Yunqing (Pei, Yunqing.) | Wang, Laili (Wang, Laili.) | Yu, Longyang (Yu, Longyang.) | Zhao, Cheng (Zhao, Cheng.) | Zhu, Mengyu (Zhu, Mengyu.) | Liu, Xingshuo (Liu, Xingshuo.)

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Abstract:

Current sense resistor (CSR) is widely used due to cost and integration considerations in industrial applications. However, when CSRs are used to sense transient currents caused by power device switching, especially fast-switching silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (mosfets) with high di/dt, even a tiny parasitic inductance in CSRs bring a significant impact on its sensing performance. This article proposes a low-cost well-performance and easy-to-design current sensing circuit that uses the CSRs and an LR compensation network (LRCN) to compensate for the effect of parasitic inductance on transient current sensing. In order to support the parameter selection of the LR network, the effects of parameters such as parasitic capacitance, parasitic inductance, and loads on the performance of the proposed current sensing circuit are analyzed in detail. Meanwhile, a parasitic inductance measurement method that only needs passive probes is proposed to measure and calculate the parasitic inductance of CSRs. This circuit can not only sense the transient current on the printed circuit board level but also observe the transient current on the oscilloscope through a coaxial cable connection. Finally, experimental studies under an inductive load double pulse test setup with SiC mosfets are carried out to verify the validity and feasibility of the proposed transient current sensing circuit. Only a high self-resonant frequency inductor and a surface mounted device resistor are needed to form the LR network to fully compensate the effect of parasitic inductance on CSRs. © 1986-2012 IEEE.

Keyword:

Capacitance Cost benefit analysis Costs Electric fault currents Electric network analysis Inductance Metals MOS devices Natural frequencies Oxide semiconductors Power MOSFET Power quality Printed circuit boards Resistors Semiconducting silicon compounds Silicon carbide Surface mount technology Timing circuits Transients Wide band gap semiconductors

Author Community:

  • [ 1 ] [Yang, Chengzi]State Key Laboratory of Electrical Insulation and Power Equipment, Xi'An Jiaotong University, Xi'an, China
  • [ 2 ] [Pei, Yunqing]State Key Laboratory of Electrical Insulation and Power Equipment, Xi'An Jiaotong University, Xi'an, China
  • [ 3 ] [Wang, Laili]State Key Laboratory of Electrical Insulation and Power Equipment, Xi'An Jiaotong University, Xi'an, China
  • [ 4 ] [Yu, Longyang]State Key Laboratory of Electrical Insulation and Power Equipment, Xi'An Jiaotong University, Xi'an, China
  • [ 5 ] [Zhao, Cheng]State Key Laboratory of Electrical Insulation and Power Equipment, Xi'An Jiaotong University, Xi'an, China
  • [ 6 ] [Zhu, Mengyu]State Key Laboratory of Electrical Insulation and Power Equipment, Xi'An Jiaotong University, Xi'an, China
  • [ 7 ] [Liu, Xingshuo]State Key Laboratory of Electrical Insulation and Power Equipment, Xi'An Jiaotong University, Xi'an, China

Reprint Author's Address:

  • [Wang, Laili]State Key Laboratory of Electrical Insulation and Power Equipment, Xi'An Jiaotong University, Xi'an, China;;

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Source :

IEEE Transactions on Power Electronics

ISSN: 0885-8993

Year: 2020

Issue: 12

Volume: 35

Page: 13356-13366

6 . 1 5 3

JCR@2020

6 . 1 5 3

JCR@2020

ESI Discipline: ENGINEERING;

ESI HC Threshold:59

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 4

SCOPUS Cited Count: 8

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 8

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