As　an　important　part　of　the　information　revolution,　integrated　circuits　have　been　developing　in　a　short,　light,　and　high-integration　direction　in　recent　years.　According　to　the　international　semiconductor　technology　route,　copper　has　encountered　bottlenecks　in　the　22-nm　technology　node　and　it　is　difficult　to　keep　up　with　the　data　throughput　of　processors.　The　increase　of　Cu　resistivity　is　aggravated　by　the　problems　such　as　electron　scattering,　and　the　mass　transfer　along　interface　and　grain　boundary　is　one　of　the　most　urgent　problems　to　be　solved　for　future　technology.　Carbon　nanotubes　are　expected　to　be　the　next　generation　of　VLSI　interconnects　due　to　its　large　average　electron　mean　free　path　at　micron-scale,　high　thermal　conductivity　and　current　carrying　capacity.　In　this　review,　we　highlight　the　electrical　properties　of　carbon　nanotubes　interconnection　and　interconnection　between　carbon　nanotubes　and　metal　and　give　a　description　of　the　specific　processes,　advantages　and　disadvantages　of　each　interconnection　technology.　The　purpose　is　to　provide　some　useful　information　and　inspiration　for　future　research　work　of　carbon　nanotubes　interconnection.　©　2020　Taylor　&　Francis　Group,　LLC.