Pyrochlore　Bi1.5Zn1.0Nb1.5O7　(BZN)　thin　films　deposited　at　650　degrees　C　under　an　oxygen　pressure　of　10　Pa　by　pulsed　laser　deposition　were　characterized　as　a　function　of　zinc　amount.　The　zinc　concentration　in　the　thin　films　was　varied　using　ceramic　targets　having　0-40　mol%　excess　zinc　contents.　The　X-ray　diffraction　measurement　shows　that　thin　films　have　a　cubic　pyrochlore　phase　structure　and　a　strong　preferential　orientation　of　(111)　plane.　The　dielectric　properties　are　investigated　as　functions　of　temperature　and　frequency.　Dielectric　constant　and　loss　tangent　of　the　thin　films　both　slightly　increase　with　the　increase　of　Zn　amount.　The　thin　film　with　40　mol%　zinc　exhibits　a　dielectric　constant　of　198　and　a　loss　tangent　of　0.004　at　10　kHz.　The　dielectric　relaxation　behavior　has　been　studied　by　measuring　the　temperature　dependence　of　dielectric　properties.　The　characteristic　temperatures　(T-m)　move　to　the　high　temperature　with　the　increase　of　Zn　and　gradually　approach　that　of　BZN　ceramic.　Meanwhile,　in　a　wide　frequency　and　temperature　range　(1　kHz-1　MHz,　-100-150　degrees　C),　the　dielectric　constant　of　the　thin　films　almost　keeps　unchanged　and　shows　a　negative　temperature　coefficient.　Leakage　current　density　of　the　thin　films　with　20　mol%　zinc　is　approximately　three　order　magnitude　lower　than　that　of　films　with　0　mol%　zinc　at　400　kV/cm.　The　conduction　of　BZN　thin　films　is　controlled　by　the　Schottky　emission　mechanism　and　the　space-charge-limited　current　mechanism.　(C)　2012　Elsevier　B.　V.　All　rights　reserved.